首页> 外国专利> METHOD AND MEANS FOR OPERATING A COMPLEMENTARY ANALOGUE RECONFIGURABLE MEMRISTIVE RESISTOR INTERRUPTER AND USE THEREOF AS AN ARTIFICIAL SYNAPSE

METHOD AND MEANS FOR OPERATING A COMPLEMENTARY ANALOGUE RECONFIGURABLE MEMRISTIVE RESISTOR INTERRUPTER AND USE THEREOF AS AN ARTIFICIAL SYNAPSE

机译:互补模拟可重构存储器电阻中断器的操作方法及其装置,用作人工突触

摘要

The invention relates to an electronic memristive component that has a complementary analogue reconfigurable memristive bidirectional resistor interrupter. The component has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO boundary layers. As a result of mobile acid vacancies, the potential barriers at the boundary layers of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be displaced from the boundary layer with respect to the first electrode to the boundary layer with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method according to the invention for operating the component proposes adapted write processes that use the overlaying of write pulse sequences to achieve stipulation of a state pair of complementary resistor states. In conjunction with read pulses of adapted polarity, the component can implement fuzzy logic and be operated as an artificial synapse with the realisation of all four learning curves for complementary learning. A plurality of options for the use of the component operated according to the invention are proposed.
机译:电子忆阻元件技术领域本发明涉及一种电子忆阻元件,其具有互补的模拟可重构忆阻双向电阻器。该组件具有忆阻层序列,该序列具有BFTO / BFO / BFTO三层层和两个电极。钛阱被布置在BFTO边界层中。由于移动的酸空位,相对于忆阻层序列,电极边界层处的势垒为柔性形式。通过施加电压脉冲,酸空位可以从相对于第一电极的边界层到相对于第二电极的边界层移位,同时一个电极处的势垒的升高引起相对于第一电极的势垒的互补降低。另一个电极。根据本发明的用于操作组件的方法提出了适合的写过程,该写过程使用写脉冲序列的叠加来实现互补电阻器状态的状态对的规定。结合极性合适的读取脉冲,该组件可以实现模糊逻辑,并可以作为人造突触进行操作,实现了用于互补学习的所有四个学习曲线。对于使用根据本发明操作的组件,提出了多种选择。

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