AMORPHOUS OXIDE THIN FILM TRANSISTOR HAVING TRANSPARENT METAL OXIDE FILM/METAL/TRANSPARENT METAL OXIDE FILM PROTECTION LAYERS

摘要

The present invention provides an oxide thin film transistor. The oxide thin film transistor comprises: a substrate; a gate electrode extending in a first direction from the substrate; a gate insulating film disposed on the gate electrode and traversing the gate electrode; an oxide semiconductor layer disposed on the gate insulating film and extending in a second direction, which is perpendicular to the first direction, from both sides of the gate electrode; a source electrode and a drain electrode disposed on the oxide semiconductor layer and away from each other with the gate electrode in the center; an insulating layer disposed on the source electrode and drain electrode and disposed on the exposed oxide semiconductor layer between the source electrode and drain electrode; and protection layers which is aligned with the exposed oxide semiconductor layer between the source electrode and drain electrode and is disposed on the insulating layer. The protection layers comprise: a lower protection layer having transparent metal oxide; a metal layer disposed on the lower protection layer; and an upper protection layer having transparent metal oxide and disposed on the metal layer.