SEMICONDUCTOR DEVICE MOBILE COMPUTING DEVICE COMMUNICATION DEVICE MOBILE COMPUTING SYSTEM COMPRISING HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED TRANSISTORS

摘要

A technique for embedding a strained channel into a pin-based transistor (e.g., a FinFET such as a double gate, a tri-gate, etc.) with high mobility is disclosed wherein the stress material is clad above the channel region of the fin. In one example embodiment, silicon germanium (SiGe) is clad onto the silicon fin to provide the desired stress, but other fins and cladding materials may be used. This technique is compatible with typical process flows and cladding deposition can occur at multiple locations within the process flow. In some cases, the built-in stress from the cladding layer can be enhanced with a source / drain stressor that compresses both the pin and the cladding layer in the channel. In some cases, a selective capping layer may be provided to improve the gate dielectric / silicon interface. In one such embodiment, silicon is provided over the SiGe cladding layer to improve the gate dielectric / semiconductor interface.