EVALUATION METHOD FOR BULK SILICON CARBIDE SINGLE CRYSTALS AND REFERENCE SILICON CARBIDE SINGLE CRYSTAL USED IN SAID METHOD

摘要

A method for relatively evaluating the degree of lattice strain in a plurality of bulk SiC single crystals, and a SiC single crystal for reference used in the method. The Raman shift R _ref of the reference silicon carbide single crystal serving as a reference is measured and the Raman shift R _n of each of the plurality of bulk silicon carbide single crystals to be evaluated is measured to calculate the respective Raman shift R _n and the Raman shift R _ref And relatively comparing the difference to evaluate the magnitude of the lattice strain in the plurality of bulk silicon carbide single crystals to be evaluated. The method of evaluating the bulk monocrystalline silicon single crystal is also used in this method, And a surface roughness Ra of not more than 1 nm, a micropipe density of not more than 1.0 pcs / cm 2, and a potential of not more than 1.0 psi / cm 2, And is a reference silicon carbide single crystal having a density of 5 x 10 ³ / cm 2 or less.