A semiconductor device includes a first semiconductor die placed on a substrate. A plurality of complex interconnect structures are formed on the semiconductor die. The complex interconnect structures include an insoluble conductive pillar and a soluble layer formed on the insoluble conductive pillar. The soluble layer is reflowed to connect the first semiconductor die to a conductive layer of the substrate. The insoluble conductive pillar is not melted while being reflowed so that a solder resist does not need to be formed on the substrate. A sealant is deposited around the first semiconductor die and the complex interconnect structures. The sealant flows between the substrate and an active surface of the first semiconductor die. A second semiconductor die is placed on the substrate in a position adjacent to the first semiconductor die. A heat spreader is placed on the first semiconductor die. A part of the sealant is removed to expose the heat spreader.
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