GaN VCSEL A METHOD FOR GaN VERTICAL MICROCAVITY SURFACE EMITTING LASER VCSEL

摘要

A method and structure for forming a highly uniform and highly-porous gallium-nitride layer having a pore size of 100 nm or less is described. Electrochemical etching of heavily-doped gallium nitride at low bias voltage in deep nitric acid is used to form porous gallium nitride. The porous layer can be used in reflective structures for integrated optical devices such as VCSELs and LEDs.