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METHOD OF MANUFACTURING QUANTUM DOT USING METAL OXIDE NANOPARTICLE WITH HIGH SPECIFIC SURFACE AREA AND QUANTUM DOT MANUFACTURED BY THE METHOD
METHOD OF MANUFACTURING QUANTUM DOT USING METAL OXIDE NANOPARTICLE WITH HIGH SPECIFIC SURFACE AREA AND QUANTUM DOT MANUFACTURED BY THE METHOD
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机译:利用具有高比表面积的金属氧化物纳米粒子制造量子点的方法及由该方法制造的量子点
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摘要
The present invention relates to a method of preparing a quantum dot with excellent thermal stability and light-scattering properties using nano-metal oxides. The purpose of the present invention is to provide a method of preparing a quantum dot which can be dispersed in various polar solvents by synthesizing particles which are excellent in thermal stability, light-scattering properties and dispersion stability, and may have hydrophilic and hydrophobic characteristics. To this end, the present invention provides the method of preparing the quantum dot, and the quantum dot prepared by the method, the method comprises the steps of: (a) mixing at least one selected from zinc (Zn), cadmium (Cd), indium (In) and copper (Cu) with an unsaturated fatty acid, and adding an ethylene-based hydrocarbon organic solvent to the mixture to synthesize a cationic precursor; (b) mixing at least one among selenium (Se), sulfur (S), phosphorous (P) and tellurium (Te) with any one series group selected from alkylphosphine series, alkylphosphine oxide series and trialkylphosphine series to synthesize an anionic precursor; and (c) mixing the cationic precursor synthesized in the step (a) with the anionic precursor synthesized in the step (b) at a predetermined ratio, and making the cationic precursor synthesized in the step (a) react with the anionic precursor synthesized in the step (b) at a predetermined temperature to synthesize the quantum dot.
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