METHOD FOR GROWING MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE SILICON INGOT PREPARED THEREBY

摘要

Provided is a method for growing monocrystalline silicon comprising the following steps: forming a silicon-containing solution in a crucible by applying a Czochralski method; and drawing a solution for monocrystalline silicon growth. While forming the silicon-containing solution including heavy hydrogen-injection nitride-deposition silicon and monocrystalline silicon, gas containing argon is introduced, and a magnetic field is applied during the drawing step. Moreover, provided is a method for manufacturing a wafer based on the monocrystalline silicon.;COPYRIGHT KIPO 2017