A method for driving a photosensor on a basis of transition metal molybdenum disulfide, including a sensor thin film transistor having a source electrode, a drain electrode, a gate electrode and a channel area of the transition metal molybdenum disulfide formed between the source electrode and the drain electrode. The method comprises the steps of: applying first gate voltage to the gate electrode; measuring drain current of the sensor thin film transistor; and applying predetermined second gate voltage having drain current, changed by incident light, lower than the first gate voltage. By such configuration, the present invention effectively inhibits a photoconductivity maintenance phenomenon occurring during optical detection of the transition metal molybdenum disulfide based photosensor, thereby being capable of implementing high speed operation of the transition metal molybdenum disulfide based photosensor.;COPYRIGHT KIPO 2017
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