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Fabrication method of polymer embedded silicon nanowire solar cells

机译:聚合物嵌入的硅纳米线太阳能电池的制备方法

摘要

The purpose of the present invention is to provide a manufacturing method of a polymer solar cell to which a silicon nanowire is inserted, wherein a polymer covering a nanowire is made of a flexible material, and a substrate and the polymer are easily separated to reduce total manufacturing costs. To this end, the manufacturing method of a polymer solar cell to which a silicon nanowire is inserted comprises: a substrate preparing step of preparing a silicon substrate including a base and an emitter layer formed on an upper end of the base; a mask forming step of forming a nano pattern on an upper end of the silicon substrate; a nanowire manufacturing step of forming a nanowire having the emitter layer formed on an end of the substrate through wet etching; a first polymer layer forming step of forming a first polymer layer on an upper end of the substrate having the nanowire; a partial first polymer layer removing step of removing remaining parts of the first polymer layer except for a part that is in contact with the base; a second polymer layer forming step of forming a second polymer layer that has the height of accommodating the nanowire and that is made of a different material from the first polymer layer, on the upper end of the substrate; a partial second polymer layer removing step of removing a part of an upper end of the second polymer layer such that an end of the nanowire protrudes from the second polymer layer; a first polymer layer removing step of removing the first polymer layer between the second polymer layer and the base; a separation step of separating a lower end part of the nanowire from the base; and an electrode forming step of forming an electrode layer on an upper end and a lower end of the second polymer layer, respectively.
机译:本发明的目的是提供一种插入有硅纳米线的聚合物太阳能电池的制造方法,其中覆盖纳米线的聚合物由挠性材料制成,并且基板和聚合物易于分离以减少总和。制造成本。为此,插入有硅纳米线的聚合物太阳能电池的制造方法包括:基板准备步骤,准备包括基底和在该基底的上端形成的发射极层的硅基底;掩模形成步骤,其在硅基板的上端形成纳米图案。纳米线制造步骤,通过湿法蚀刻形成具有形成在基板的端部上的发射极层的纳米线。第一聚合物层形成步骤,在具有纳米线的基板的上端形成第一聚合物层。部分第一聚合物层去除步骤,去除除与基底接触的部分之外的第一聚合物层的其余部分;第二聚合物层形成步骤,在基板的上端形成第二聚合物层,该第二聚合物层具有容纳纳米线的高度并且由与第一聚合物层不同的材料制成。部分第二聚合物层去除步骤,去除第二聚合物层的上端的一部分,使得纳米线的一端从第二聚合物层突出。第一聚合物层去除步骤,去除第二聚合物层和基底之间的第一聚合物层。分离步骤,其将纳米线的下端部分与基底分离;电极形成步骤,在第二聚合物层的上端和下端分别形成电极层。

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