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INJECTION-LOCKED FREQUENCY DIVIDER USING CROSS-COUPLED COMPLEMENTARY TRANSISTORS AND TRANSFORMER COUPLING

机译:交叉耦合互补晶体管和变压器耦合的注入锁定频率分频器

摘要

Injection synchronizing frequency divider of the present invention, the first nose end and the second nose end is the mutual inductance that is coupled transformer, the drain is connected to one end of the first nose end, PMOS transistor source is connected to a power source, a drain said primary nose is connected to the other end of the one end, the source being coupled to ground, NMOS transistor in which the gate is connected to the drain of the PMOS transistor, the drain is the second nose and one end and the connection, the gate is the PMOS transistor and the NMOS being respectively connected to the transistor gate, the input source is connected to ground, is connected in feedback a pair of the output stage is formed on the drain (Feedback) transistor and the first nose end and parallel, the input signal is input to the gate includes a transistor, the PMOS transistor has a gate connected with a drain of the NMOS transistor is cross-coupled to the NMOS transistor. According to the present invention, in the oscillator core by using a transformer coupling by reducing the influence of the parasitic capacitor and the load capacitor of the inductor and the transistor, there is an effect that can operate at high frequencies. ;
机译:本发明的注入同步分频器,第一鼻端和第二鼻端是互感器,耦合于变压器,漏极连接至第一鼻端的一端,PMOS晶体管源极连接至电源,所述主鼻的漏极连接到所述一端的另一端,所述源极接地,所述NMOS晶体管的栅极连接到所述PMOS晶体管的漏极,所述漏极是第二鼻和一端,并且连接,栅极是PMOS晶体管,NMOS分别连接到晶体管栅极,输入源接地,反馈连接在漏极(反馈)晶体管和第一鼻上形成一对输出级端并联,输入信号输入到包括晶体管的栅极,PMOS晶体管的栅极与NMOS晶体管的漏极交叉耦合到NMOS晶体管。根据本发明,在振荡器芯中通过使用变压器耦合来减小电感器和晶体管的寄生电容器和负载电容器的影响,从而具有可以在高频下工作的效果。 ;

著录项

  • 公开/公告号KR101706855B1

    专利类型

  • 公开/公告日2017-02-14

    原文格式PDF

  • 申请/专利权人 충북대학교 산학협력단;

    申请/专利号KR20150097305

  • 发明设计人 홍종필;권혁태;

    申请日2015-07-08

  • 分类号H03B5/12;

  • 国家 KR

  • 入库时间 2022-08-21 13:26:03

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