- WRITING A MULTIBIT RESISTANCE-SWITCHING MEMORY CELL INCLUDING A DUMMY RESISTANCE RESISTANCE SWITCHING ELEMENTS AND DIODES

摘要

The non-volatile storage comprises a set of Y lines; A set of X lines; And a plurality of memory cells communicating with the set of X lines and the set of Y lines. Each memory cell of the plurality of memory cells includes a static resistive resistive element, two or more reversible resistive-switching elements, and a plurality of diodes. The resistive element in the static resistance state and the two or more reversible resistance-switching elements are connected to a corresponding Y line of the set of Y lines and a corresponding diode, and the diodes are connected to a common X line /RTI One or a plurality of data bits are programmed in the particular memory cell by causing a current to flow between the Y lines connected to a particular one of the plurality of memory cells.;