CMP FABRICATION SOLUTION FOR SPLIT GATE MEMORY EMBEDDED IN HK-MG PROCESS

摘要

The semiconductor device includes a substrate, at least one logic element, and a split gate type memory element. At least one logic element is located on the substrate. A split-gate type memory device is located on a substrate and includes a memory gate and a select gate. The memory gate and the select gate are electrically isolated from each other. The upper surface of the select gate is higher than the upper surface of the memory gate.