Manufacturing method for a semiconductor of the scrubber waste gas treatment and thus the scrubber to prevent corrosion and oxide adhesion method using the scrubber

摘要

A manufacturing method of a scrubber for semiconductor waste gas treatment, a scrubber, and a method of preventing corrosion and corrosion of an oxide using the scrubber are disclosed. According to an embodiment of the present invention, there is provided a method of manufacturing a scrubber for processing a semiconductor waste gas with a liner formed on an inner circumferential surface of a reaction chamber, comprising the steps of: forming a coating layer on an inner peripheral wall of a liner by spray coating under an atmospheric pressure; A step 2 of processing a purge hole in the liner coated in step 1; A step of surface-treating the liner having the coating layer formed thereon at a temperature of 200 to 300C; And a fourth step of measuring a purge hole and a coating thickness of the surface heat treated liner. Preferably, the inorganic ceramic coating is a graphene material, and the liner is formed to have a constant gap with the inner peripheral wall of the reaction chamber.According to this, it is possible to simultaneously prevent corrosion and adhesion of the process oxide, which have excellent durability in a high temperature environment, by preventing the oxide from adhering to the surface and the purge hole of the liner of the scrubber.;