ELECTRONIC DEVICE INCLUDING DOPED REGIONS BETWEEN CHANNEL AND DRAIN REGIONS AND A PROCESS OF FORMING THE SAME

摘要

The electronic device may include a drain region of the transistor, and the drain region has a first conductivity type. The electronic device may also include a channel region of the transistor, and the channel region has a second conductivity type opposite to the first conductivity type. The electronic device may further include a first doped region having a first conductivity type, wherein the first doped region extends from the drain region toward the channel region. The electronic device may further include a second doped region having a first conductivity type and a second doped region disposed between the first doped region and the channel region.;