MANUFACTURING METHOD OF SUPERCAPACITOR ELECTRODE CONTAINING CRUMPLED GRAPHENE COMPOSITE ELECTRODE MANUFACTURED THEREBY AND SUPERCAPACITOR CONTAINING THE SAME

摘要

In one embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (1) preparing a mixed solution obtained by mixing an acid-treated carbon nanotube, graphene oxide, a conductive polymer monomer, and a solvent; Polymerizing the monomer of the mixed solution (step 2); Spray-drying and heat-treating the polymerized mixed solution to prepare a crumpled graphene composite (Step 3); And a step (4) of mixing the complex, graphene oxide and a solvent, applying the mixture on a current collector, and heat treating the mixture (step 4).