3 A METHOD FOR FORMING A THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE

摘要

A method of forming a three-dimensional semiconductor memory element is provided. A method of forming a three-dimensional semiconductor memory device according to the present invention includes loading a substrate into one chamber, alternately and repeatedly depositing oxide films and sacrificial films in the chamber, and unloading the substrate from the chamber Wherein during the deposition of each of the oxide films, the oxygen source gas may comprise nitrous oxide.