200 /300 HYBRID 200 /300 SEMICONDUCTOR PROCESSING APPARATUSES

摘要

In one aspect, there is described that some of the devices that carried out on the 200 mm wafer processing chamber designed to cause the PECVD (plasma-enhanced chemical vapor deposition) on the 300 mm wafer. More specifically, it is designed and described with a 300 mm wafer processing chamber compatible modified pedestal, the carrier plate, and the shower head for 200 mm wafers. The use of the modified apparatus 200 mm films are deposited using 300 mm 200 mm The device for modifying the devices replacement has also been observed that it is the deposited films and quality are similar. ;