LTPS TFT with dual-gate structure and method of forming a LTPS TFT

摘要

The present invention relates to a low temperature polysilicon thin film transistor having a dual gate structure and a method of forming a low temperature polysilicon thin film transistor. The low temperature polysilicon thin film transistor comprises: a substrate, one or more patterned amorphous silicon (a-Si) layers disposed in a barrier layer on the substrate to form a bottom gate, an NMOS disposed on the barrier layer, and a the barrier layer arranged PMOS. The NMOS includes a patterned gate electrode (GE) layer as an upper gate, wherein the patterned GE layer and a lower gate formed by the one or more a-Si patterned layers form a dual gate structure form. The present invention proposes a low temperature polysilicon thin film transistor having a more stabilized I-V characteristic, better controllability, lower power consumption, and higher production yield.