LTPS TFT HAVING DUAL-GATE STRUCTURE AND METHOD FOR FORMING THE LTPS TFT

摘要

The present invention provides a low-temperature poly-silicon thin-film transistor having a dual-gate structure, and a method for forming the low-temperature poly-silicon thin-film transistor. The low-temperature poly-silicon thin-film transistor comprises a substrate, one or more patterned amorphous silicon (a-Si) layers, disposed in a barrier layer on the substrate, for forming a bottom gate, an NMOS disposed on the barrier layer, and a PMOS disposed on the barrier layer. The NMOS comprises a patterned gate electrode (GE) layer as a top gate, and the patterned GE layer and the bottom gate formed by the one or more patterned a-Si layers form a dual-gate structure. The present invention provides a low-temperature poly-silicon thin-film transistor with a more stable I-V characteristic, improved driving capacity, reduced power consumption and higher yield rate.