ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS

摘要

The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCuxNiy, with 0x3; 0y3) or multicomponent Gallium-Tin-Zinc-Copper-Titanium oxide, designated here after as GSZTCO, in different molar compositions, having an amorphous or crystalline structure and with the electrical characteristics of a donor or electron acceptor semiconductor, doped or not doped with impurities, such as, Zirconium or nickel or nitrogen, as a way to control the semiconductor electronic behaviour (valence); including the manufacture process at room temperature or temperatures below 100° C. and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semi-conductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.