STRUCTURES WITH INTEGRAL LIFE-SENSING CAPABILITY

摘要

receiving structure the stress that can lead to structural destruction (10, 50) are provided. Structure (10, 50) are first and second conductive layers (16, 18, 56, 58) and the dielectric, including the intermediate layer (20, 60) therebetween formed by a semiconductor or resistive material, the first and second conductive layers (16, 18, 56, 58) and the intermediate layer (20, 60) are combined to form an electrical component, that is the capacity or the resistance element. The electrical component is disposed in the temporary structure to respond to the physical deformation and permanent deformation (10, 50) of the structure resulting from external factors and internal factors (10, 50). Structure (10, 50) are first and second conductive layers so as to generate an electrical signal from the electrical component (16, 18, 56, 58) applying a potential to at least one of and and temporarily deformed physically in response to permanent deformation that in response to the electric element detecting a change of the electric signal generated by the electrical component, and the structure change of the electric signal further comprises transmitting to a position spaced from the (10, 50).