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LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY
LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY
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机译:光接收元件,光接收元件阵列,制造光接收元件的方法和制造光接收元件阵列的方法
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摘要
Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same. A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5 ×10 16 cm -3 or less.
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机译:提供一种在近红外区域具有灵敏度并且容易获得良好的晶体品质的光接收元件,容易以高精度形成一维或二维阵列的光接收元件,并且可以减少暗电流;受光元件阵列;及其制造方法。光接收元件包括III-V族化合物半导体堆叠结构,该堆叠结构包括其中具有pn结15的吸收层3,其中该吸收层具有由III-V族化合物半导体构成的多量子阱结构,该pn结15通过选择性地将杂质元素扩散到吸收层中而形成Al 2 O 3,并且吸收层中杂质元素的浓度为5×10 16 cm -3以下。
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