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VIA SELF ALIGNMENT AND SHORTING IMPROVEMENT WITH AIRGAP INTEGRATION CAPACITANCE BENEFIT
VIA SELF ALIGNMENT AND SHORTING IMPROVEMENT WITH AIRGAP INTEGRATION CAPACITANCE BENEFIT
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机译:通过气隙集成电容优势进行自我校准和改进
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摘要
A method including forming a sacrificial material between metal lines of an integrated circuit structure; forming a mask on the sacrificial material; and after forming the mask, removing the sacrificial material to leave a void between the metal lines. An apparatus including an integrated circuit substrate; a first metallization level on the substrate; a second metallization; and a mask disposed between the first metallization level and the second metallization level, the mask including a dielectric material having a porosity select to allow mass transport therethrough, wherein each of the first metallization level and the second metallization level comprises a plurality of metal lines and a portion of adjacent metal lines of at least one of the first metallization level and the second metallization level are separated by voids.
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