The invention relates to a microelectronic method for etching a layer (700) based on silicon nitride comprising the following steps:modification of the layer (700) based on silicon nitride (SiN) so as to form at least one modified zone (710), the modification comprising at least one implantation (1000), preferably by ion plasma, hydrogen (H) in the SiN-based layer (700);- removal of the at least one modified area (710);characterized in that the removal of the at least one modified area (710) comprises at least one step of preferably plasma etching the at least one modified area (710) using a chemistry comprising at least:At least one compound selected from fluorocarbon compounds (C x F z) or hydrofluorocarbon compounds (C x H y F z), andAt least one compound selected from Si w Cl (2 w + 2) and Si w F (2 w + 2).
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机译：本发明涉及一种用于蚀刻基于氮化硅的层（700）的微电子方法，包括以下步骤：对基于氮化硅（SiN）的层（700）进行修饰以形成至少一个修饰区（710），该修饰包括优选通过离子等离子体对SiN中的氢（H）进行至少一次注入（1000）基层（700）;-去除至少一个修改区域（710）;其特征在于，至少一个修改区域（710）的去除包括至少一个步骤，该步骤优选地使用包括至少一种化学物质的化学方法等离子刻蚀至少一个修改区域（710）。选自碳氟化合物（C x F z）或氢氟碳化合物（C x H y F z）中的至少一种，和选自Si w Cl（2 w + 2）和Si w F（2 w + 2）的至少一种化合物。
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