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CVD APPARATUS FOR GROWING CARBON NANO STRUCTURE AND CARBONIZATION PROCESSING METHOD FOR INSIDE OF PROCESSING FURNACE OF CVD APPARATUS

机译:用于生长碳纳米结构的化学气相沉积装置以及用于化学气相沉积装置炉膛内的碳化处理方法

摘要

PROBLEM TO BE SOLVED: To provide a CVD apparatus for growing a carbon nano structure, the CVD apparatus being capable of reversely controlling raw material gas consumed other than for growth of the carbon nano structure from a surface of an object to be processed.SOLUTION: A CVD apparatus M according to the invention includes a processing furnace 1 in which an object to be treated is disposed, gas introduction means 21, 22 for introducing raw material gas including carbon to inside the processing furnace, and heating means 3 heating the raw material gas. The CVD apparatus has a surface layer of a part contacting with the raw material gas inside the processing furnace, the surface layer being composed of a nickel carbon layer 12 containing an equivalent amount of 30 at% or more of nickel and carbon each.SELECTED DRAWING: Figure 2
机译:解决的问题:为了提供一种用于生长碳纳米结构的CVD设备,该CVD设备能够反向控制所消耗的原料气体,而不是用于从待处理物体的表面生长碳纳米结构的消耗气体。根据本发明的CVD设备M包括:处理炉1,其中布置有待处理的对象;气体引入装置21、22,用于将包括碳的原料气体引入到处理炉内部;以及加热装置3,其对原料进行加热加油站。 CVD装置具有在处理炉内与原料气体接触的部分的表面层,该表面层由镍碳层12构成,该镍碳层12分别含有相当于30at%以上的镍和碳。 :图2

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