DIRECT AND SEQUENTIAL FORMATION OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES

摘要

PROBLEM TO BE SOLVED: To provide a multilayer article in which a graphene layer is directly formed on a surface of a substrate of, e.g., a silicon semiconductor, without relying on a transfer process.SOLUTION: A multilayer article comprises: a boron nitride layer 20 on a substrate 30 comprising a dielectric layer 40; and a graphene layer 10 in contact with the boron nitride layer. The article comprises a metal film in contact with the graphene layer. The invention also includes an article comprising a second boron nitride layer in contact with the graphene layer.SELECTED DRAWING: Figure 2B