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Square gate vacuum valve and semiconductor manufacturing device provided with same

机译:方闸真空阀及具有该方闸真空阀的半导体制造装置

摘要

The present invention relates to a square gate vacuum valve and a semiconductor manufacturing device comprising the gate electrode of the gate frame of which the first and second gates are formed on opposite sides of the square gate vacuum valve A first shield unit for selectively opening and closing the first gate through a shield plate for shielding the top and a first opening provided on one side of the lower portion of the gate frame, which is linearly movable or rotated in the gate frame, and selectively opens and closes the first gate AndThe lower portion of the gate frame includes a second valve unit, which is disposed linearly or rotationally within the gate frame through the second opening spaced apart from the first opening and selectively opens and closes the second gate.Diagram
机译:方栅真空阀和半导体制造装置技术领域本发明涉及一种方栅真空阀和包括其栅极框架的栅电极的半导体制造装置,其中第一和第二栅极形成在方栅真空阀的相对侧。第一屏蔽单元,用于选择性地打开和关闭。第一闸门通过用于遮挡顶部的屏蔽板和设置在闸门框架下部的一侧上的第一开口构成,第一开口在闸门框架中线性移动或旋转,并选择性地打开和关闭第一闸门。闸门框架的第二阀单元包括第二阀单元,该第二阀单元通过与第一开口间隔开的第二开口线性或旋转地布置在闸门框架内,并选择性地打开和关闭第二闸门。图表

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