High-temperature annealed perpendicular magnetic anisotropy structure for magnetic random access memory

摘要

A vertically synthesized antiferromagnetic (pSAF) structure and a method of manufacturing such a structure are disclosed. The pSAF structure includes a first high perpendicular magnetic anisotropy (PMA) multilayer separated by a thin ruthenium layer and a second high PMA layer. Each PMA layer is composed of a first cobalt layer and a second cobalt layer separated by a nickel / cobalt multilayer. After each of the first and second PMA layers and the ruthenium exchange coupling layer are deposited, the resulting structure proceeds to a high temperature annealing step, whereby the first and second PMA layers each exhibit perpendicular magnetic anisotropy. Have. [Options] Fig. 6