首页> 外国专利> EVALUATION METHOD OF NON-MAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD OF NON-MAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE, AND NON-MAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE

EVALUATION METHOD OF NON-MAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD OF NON-MAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE, AND NON-MAGNETIC GARNET SINGLE CRYSTAL SUBSTRATE

机译:非磁性石榴石单晶基板的评估方法,非磁性石榴石单晶基板的生产方法,非磁性石榴石单晶基板

摘要

PROBLEM TO BE SOLVED: To provide an evaluation method of a SGGG single crystal substrate for evaluating simply ease of cracking of the substrate, in a process for producing the substrate.;SOLUTION: An evaluation method (S5) of a non-magnetic garnet single crystal substrate includes: etching the surface of the non-magnetic garnet single crystal C split into a prescribed thickness (S6); measuring a center position P2 of a growth striation by observing the growth striation of the etched substrate SA (S7); and evaluating ease of cracking of the substrate based on a distance between the center position P2 of the growth striation and a center position P1 of the substrate (S8).;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2018,JPO&INPIT
机译:解决的问题:提供一种SGGG单晶衬底的评估方法,该方法用于在衬底的制造过程中简单地评估衬底的开裂容易性;解决方案:非磁性石榴石单件的评估方法(S5)晶体基板包括:将非磁性石榴石单晶C的表面蚀刻成规定的厚度(S6);通过观察蚀刻的基板SA的生长条纹来测量生长条纹的中心位置P2(S7);并根据生长条纹的中心位置P2与衬底的中心位置P1之间的距离评估衬底的开裂难易程度(S8).;选定的图纸:图1;版权:(C)2018,JPO&INPIT

著录项

  • 公开/公告号JP2018052745A

    专利类型

  • 公开/公告日2018-04-05

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20160186469

  • 发明设计人 MURASE EIJI;

    申请日2016-09-26

  • 分类号C30B29/28;C30B15/00;

  • 国家 JP

  • 入库时间 2022-08-21 13:11:45

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