NEW CYCLO DISILAZANE DERIVATIVE AND METHOD FOR MANUFACTURING THE SAME, AND SILICON CONTAINING THIN FILM USING CYCLO DISILAZANE DERIVATIVE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a cyclo disilazane derivative capable of forming a high purity silicon containing thin film excellent in physical and electrical properties by various vapor deposition methods, having high thermal stability, volatility, and reactivity, and having a liquid form at a normal temperature under a pressure easily handled.SOLUTION: The method for manufacturing a cyclo disilazane derivative includes reacting a halocyclo disilazane derivative in which at least one of Rto Rin the following formula is halogen, with a metal hydride, such as lithium aluminum hydride to substitute the halogen of Rto Rinto H. The cyclo disilazane derivative has high thermal stability and volatility so as to be shown on thermogravimetric analysis results in the figure. (where, at least one of Rto Ris H, and the remainder is H, halogen, C1-C5 alkyl or C2-C5 alkenyl).SELECTED DRAWING: Figure 1