首页> 外国专利> Apparatus and method for measuring load current by applying a compensated gain to a voltage derived from a drain-source voltage of a power gating device

Apparatus and method for measuring load current by applying a compensated gain to a voltage derived from a drain-source voltage of a power gating device

机译:通过向功率选通装置的漏极-源极电压衍生的电压施加补偿增益来测量负载电流的设备和方法

摘要

An apparatus and method for measuring load current supplied to one or more integrated circuit cores is disclosed. The device includes a power gating field effect transistor (FET) comprising a gate, a source, and a drain, wherein the source is coupled to a voltage rail, the drain is coupled to a load, and the gate is coupled to a voltage rail. Gain based on the drain-source voltage of the power gating FET configured to receive a gating voltage to selectively turn on the power gating FET to allow flow between the load A differential amplifier configured to generate a current-related voltage with respect to a load current by applying to the input voltage, wherein the gain is input in response to a voltage or temperature change of the gate-source voltage of the power gating FET Change in inverse proportion to the voltage. [Selection] Figure 2
机译:公开了一种用于测量提供给一个或多个集成电路芯的负载电流的设备和方法。该装置包括功率门控场效应晶体管(FET),该功率门控场效应晶体管(FET)包括栅极,源极和漏极,其中,源极耦合至电压轨,漏极耦合至负载,并且栅极耦合至电压轨。 。基于功率门控FET的漏极-源极电压的增益,该功率门控FET接收门控电压以有选择地导通功率门控FET,以允许负载之间流动通过施加到输入电压,其中响应于功率门控FET的栅极-源极电压的电压或温度变化而输入增益,该变化与该电压成反比。 [选择]图2

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