首页> 外国专利> Apparatus and method for measuring load current by applying compensation gain to a voltage derived from a drain-source voltage of a power gating device

Apparatus and method for measuring load current by applying compensation gain to a voltage derived from a drain-source voltage of a power gating device

机译:通过向功率选通装置的漏极-源极电压衍生的电压施加补偿增益来测量负载电流的设备和方法

摘要

An apparatus and method for measuring load current supplied to one or more integrated circuit cores is disclosed. The device includes a power gating FET (field effect transistor) including a gate, a source and a drain, the source coupled to the voltage rail, the drain coupled to the load, and the gate allowing the load current to flow between the voltage rail and the load Configured to receive a gating voltage for selectively turning on the power gating FET; And a differential amplifier configured to generate a current-related voltage related to the load current by applying a gain to the input voltage based on a drain-source voltage of the power gating FET, wherein the gain is determined by the temperature of the power gating FET or the gate- In response to the variation of the input voltage.;
机译:公开了一种用于测量提供给一个或多个集成电路芯的负载电流的设备和方法。该器件包括一个功率门控FET(场效应晶体管),包括一个栅极,一个源极和一个漏极,源极耦合到电压轨,漏极耦合到负载,栅极允许负载电流在电压轨之间流动负载被配置为接收选通电压以选择性地导通功率选通FET;以及差分放大器,其被配置为通过基于功率门控FET的漏-源电压对输入电压施加增益来生成与负载电流相关的电流相关电压,其中,增益由功率门控的温度确定FET或栅极-响应输入电压的变化。

著录项

  • 公开/公告号KR20180028440A

    专利类型

  • 公开/公告日2018-03-16

    原文格式PDF

  • 申请/专利权人 퀄컴 인코포레이티드;

    申请/专利号KR20187000465

  • 发明设计人 닉스 마이클 안;

    申请日2016-06-08

  • 分类号G01R19/32;G01R19;

  • 国家 KR

  • 入库时间 2022-08-21 12:40:35

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