Single crystal growth system and method capable of controlling shape of ingot interface

摘要

The present invention is a method for controlling the shape of a growth interface while growing a single crystal ingot by the Czochralski method, and after setting the control conditions of the single crystal growth step so that the interface of the ingot becomes a target shape Starting the growth of the single crystal ingot, measuring the weight of the ingot grown for a certain period of time with a load cell arranged on the upper part of the single crystal ingot, and deriving the measured value during the certain period of time, outside the process chamber Deriving a theoretical value of the weight of the single crystal ingot through the diameter of the single crystal ingot measured by a diameter measuring camera disposed in the height and the height of the single crystal ingot grown for a certain time, the measured value and the theoretical value The step of deriving the difference between the two and predicting the growth interface shape of the growing single crystal ingot, and the predicted single crystal ingot interface shape Comparing the shape of the interface of the single crystal ingot to target, it may include the step of changing the process conditions in the single crystal ingot growth. Therefore, the interface shape of the growing ingot can be predicted during the growth process of the single crystal ingot, and the silicon ingot can be grown to the target interface shape by controlling the process conditions. [Selection] Figure 4