Method of preparing Eu-doped ZnO transparent conductive film

摘要

PROBLEM TO BE SOLVED: To provide an Eu doped ZnO transparent conductive film in an amorphous state, and a method for forming the same.SOLUTION: The Eu doped ZnO transparent conductive film is deposited by doping Eu in a ZnO film on a substrate by a sputtering method. The Eu doped ZnO transparent conductive film is preferably deposited while introducing HO vapor gas; the Eu doped concentration of the Eu doped ZnO transparent conductive film is preferably 13 at% or more; and the Eu doped ZnO transparent conductive film deposited in this manner is preferably annealed at a temperature of 400-450°C in a hydrogen gas atmosphere.SELECTED DRAWING: Figure 8