Matrix sensor with logarithmic response and wide temperature operating range

摘要

To provide an optical sensor utilizing complementary metal oxide semiconductor (CMOS) integration technology.Kind Code: A1 A matrix array sensor having a logarithmic response and a wide range of temperature operating ranges is provided, the sensor comprising a plurality of active pixels each defined by a photodiode (PD) operating in a solar cell mode, The diode is formed by a semiconductor junction in the substrate (11) and the reverse bias junction (20) is present at a distance (d) from the junction of the photodiode that is shorter than the diffusion distance of charge carriers in the substrate , The junction is formed by diffusion to a depth (p) that is greater than the depth (p ') used to form the source or drain of the transistor of the sensor adjacent to the photodiode.(FIG.