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Organic thin film transistor, organic semiconductor material for non-light emitting organic semiconductor device and its application

机译:有机薄膜晶体管,用于非发光有机半导体器件的有机半导体材料及其应用

摘要

PROBLEM TO BE SOLVED: To provide an organic thin film transistor having high carrier mobility.SOLUTION: An organic thin film transistor containing a compound represented by the following formula in a semiconductor active layer. In the formula, x represents O, S or Se atom; R,R,Rand Rto Rrepresent hydrogen or halogen atom; R,R,Rand Rrepresent hydrogen atom, alkyl group, halogen atom or -L-R; one of R,R,Rand Rrepresents -L-R; L represents specific bivalent coupling group (however, bivalent coupling group represented by -CR'- is not directly coupled to mother nucleus; R represents alkyl group, cyano group, vinyl group, ethynyl group, oxyethylene group, oligooxyetylene group in which the repetition number v of oxyethylene unit is equal to 2 or more, siloxane group, oligosiloxane in which the number of silicon atoms is equal to 2 or more, or trialkylsilyl group.
机译:解决的问题:提供一种具有高载流子迁移率的有机薄膜晶体管。解决方案:一种有机薄膜晶体管,其在半导体活性层中包含由下式表示的化合物。式中,x表示O,S或Se原子。 R,R,R和Rto R代表氢或卤素原子; R,R,R和R代表氢原子,烷基,卤素原子或-L-R; R,R,Rand R之一表示-L-R; L代表特定的二价偶联基团(但是,-CR'-代表的二价偶联基团不直接偶联于母核; R代表烷基,氰基,乙烯基,乙炔基,氧乙烯基,低聚亚乙烯基),其中重复数氧乙烯单元的v等于或大于2,硅氧烷基,硅原子数等于或大于2的低聚硅氧烷或三烷基甲硅烷基。

著录项

  • 公开/公告号JP6247568B2

    专利类型

  • 公开/公告日2017-12-13

    原文格式PDF

  • 申请/专利权人 富士フイルム株式会社;

    申请/专利号JP20140040567

  • 发明设计人 益居 健介;平井 友樹;

    申请日2014-03-03

  • 分类号H01L51/30;H01L51/05;H01L51/40;H01L29/786;C07D495/04;C07D493/04;C07F7/18;

  • 国家 JP

  • 入库时间 2022-08-21 13:07:57

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