Domain wall-based spin MOSFET and domain wall-based analog memory

摘要

The domain wall utilizing spin MOSFET (100) includes a domain wall (DW), a first region (1a), a second region (1b), and a third region (1c) located between the first region and the second region. And a domain wall driving layer (1), a channel layer (5), and a first end (5aA) of the first surface of the channel layer, and disposed so as to be in contact with the third region of the domain wall driving layer. Between the magnetization free layer (6), the magnetization fixed layer (7) provided at the second end (5aB) opposite to the first end, and the first end and the second end of the channel layer. And a gate electrode (8) provided via a gate insulating layer (9).