Crystal alignment layer stacked structure, electronic memory, and method of manufacturing crystal alignment layer stacked structure

摘要

A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe and Bi 2 Se 3 as a main component, and which is oriented in a certain crystal orientation