Power semiconductor device drive control circuit

摘要

The voltage driver (3) transitions the voltage of the gate (101), which is the control electrode of the power semiconductor element (100), in response to an on command or an off command. The gate voltage detector (4) generates a gate voltage detection signal (VG). The delay signal generation unit (5) generates a delay signal (dVG) obtained by adding a delay time to the detection signal (VG). The difference calculation unit (6) generates a voltage difference signal (VD) between the detection signal (VG) and the delay signal (dVG). The short-circuit state detection unit (7) detects the short-circuit state of the power semiconductor element (100) when the voltage difference signal (VD) exceeds the reference voltage (VR1) during the turn-on operation of the power semiconductor element (100). To do.