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System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
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机译:用于模拟基于有限元模型的半导体晶片卡紧导致的面内变形预测的系统和方法
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摘要
Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A series of Zernike basis wafer shapes process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.
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