首页> 外国专利> MANUFACTURE METHOD OF QUANTUM DOT LIGHT-EMITTING DIODE DISPLAY AND QUANTUM DOT LIGHT-EMITTING DIODE DISPLAY

MANUFACTURE METHOD OF QUANTUM DOT LIGHT-EMITTING DIODE DISPLAY AND QUANTUM DOT LIGHT-EMITTING DIODE DISPLAY

机译:量子点发光二极管显示器的制造方法

摘要

The disclosure provides a manufacture method of a quantum dot light-emitting diode display and a quantum dot light-emitting diode display. The manufacture method of a quantum dot light-emitting diode display provided by the disclosure forms a light-emitting layer by a quantum dot thin film prepared by filming a metal complex solution, compared with a conventional ink jet printing method with quantum dot ink, process parameters can be adjusted easily, a process can be simple, costs can be reduced, three primary colors R, G, B can be adjusted by precisely controlling sub pixel levels, a color film can be omitted, which can be a better industrial design in weight and thickness. According to the quantum dot light-emitting diode display provided by the disclosure, the light-emitting layer is formed by a quantum dot thin film, which can offer the quantum dot light-emitting diode display excellent quality in display, the process is simple.
机译:本发明提供了一种量子点发光二极管显示器和量子点发光二极管显示器的制造方法。本发明提供的量子点发光二极管显示器的制造方法,与传统的采用量子点油墨的喷墨印刷方法相比,通过对金属络合物溶液进行成膜而形成的量子点薄膜形成发光层。可以轻松调整参数,简化过程,降低成本,可以通过精确控制子像素级别来调整R,G,B三基色,可以省去彩色胶卷,从而可以更好地进行工业设计重量和厚度。本发明提供的量子点发光二极管显示器,其发光层由量子点薄膜形成,可以为量子点发光二极管显示器提供优良的显示质量,工艺简单。

著录项

  • 公开/公告号US2018102506A1

    专利类型

  • 公开/公告日2018-04-12

    原文格式PDF

  • 申请/专利号US201615106315

  • 发明设计人 DONGZE LI;

    申请日2016-05-23

  • 分类号H01L51/56;H01L51/50;H01L27/32;

  • 国家 US

  • 入库时间 2022-08-21 13:05:38

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