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Memristive cross-bar array for determining a dot product

机译:忆阻横杆阵列,用于确定点积

摘要

A method of obtaining a dot product includes applying a number of first voltages to a corresponding number of row lines within a memristive cross-bar array to change the resistive values of a corresponding number of memristors located a junctions between the row lines and a number of column lines. The first voltages define a corresponding number of values within a matrix, respectively. The method further includes applying a number of second voltages to a corresponding number of the row lines within the memristive cross-bar array. The second voltages define a corresponding number of vector values. The method further includes collecting the output currents from the column lines. The collected output currents define the dot product.
机译:一种获得点积的方法,包括将多个第一电压施加到忆阻横杆阵列内的相应数量的行线上,以改变位于行线与一定数量的交界处的相应数量的忆阻器的电阻值。列线。第一电压分别限定矩阵内的相应数量的值。该方法还包括将多个第二电压施加到忆阻交叉杆阵列内的相应数量的行线上。第二电压定义相应数量的矢量值。该方法还包括收集来自列线的输出电流。收集的输出电流定义点积。

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