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SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER COMPRISING A HEXAGONAL MESH CRYSTALLINE STRUCTURE
SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER COMPRISING A HEXAGONAL MESH CRYSTALLINE STRUCTURE
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机译:具有III-V族半导体层的半导体结构,该III-V族层包括六角形网状晶体结构
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摘要
A semiconductor structure (100) comprising:a substrate (102),a first layer (106) of AlXGaYIn(1−X−Y)N disposed on the substrate,stacks (107, 109) of several second and third layers (108, 110) alternating against each other, between the substrate and the first layer,a fourth layer (112) of AlXGaYIn(1−X−Y)N, between the stacks,a relaxation layer of AlN disposed between the fourth layer and one of the stacks,and, in each of the stacks:the level of Ga of the second layers increases from one layer to the next in a direction from the substrate to the first layer,the level of Ga of the third layers is constant or decreasing from one layer to the next in said direction, the average mesh parameter of each group of adjacent second and third layers increasing from one group to the next in said direction,the thickness of the second and third layers is less than 5 nm.展开▼
机译:一种半导体结构( 100 B>),包括:衬底( 102 B>), ListItem> 第一层( 106 B> )设置在基板上的Al X Sub> Ga Y Sub> In (1-X-Y) Sub> N ListItem> 在基板和基板之间相互交替的多个第二和第三层( 108,110 B>)的堆叠( 107,109 B>)第一层 ListItem> Al X Sub> Ga 的第四层( 112 B>) Y Sub> In (1-X-Y) Sub> N,在堆栈之间, ListItem> AlN的弛豫层置于第四层和其中一个堆栈之间的 ListItem> ,并且在每个堆栈中: ListItem> se的Ga的水平cond层在从基材到第一层的方向上从一层增加到下一层。 ListItem> 第三层的Ga含量恒定或在所述方向上从一层到下一层减小,相邻的第二层和第三层的每组的平均网格参数在所述方向上从一组到下一层增加, ListItem> 第二和第三层的厚度小于5 nm。 ListItem> UnorderedList> ListItem> UnorderedList>
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