首页>
外国专利>
Modeling Deformation Due To Surface Oxidation In Integrated Circuits
Modeling Deformation Due To Surface Oxidation In Integrated Circuits
展开▼
机译:建模集成电路中由于表面氧化而引起的变形
展开▼
页面导航
摘要
著录项
相似文献
摘要
Oxidation of high aspect ratio IC structures, such as pillars and fins, can deform them. Disclosed is technology for simulating the deformation efficiently so that process conditions or pattern design can be altered to improve manufacturability. A database describing a 3D model of the structures prior to the oxidation process is provided. Oxidation is simulated in 1D on different surfaces to estimate a depth of starting material that will be converted during oxidation. Starting material is then replaced to that depth on all surfaces, by oxide with known expansion ratio. An initial mechanical stress and strain field is determined based on the model in dependence upon the replacement depth and the expansion ratio, and the system relaxes the fields to their equilibrium states, which include the deformations. The deformations are reported to a user, who can repeat the process using different oxidizing conditions and/or patterns to optimize manufacturability.
展开▼