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Three terminal fuse structure created by oxygen vacancy traps in hafnium-based oxides
Three terminal fuse structure created by oxygen vacancy traps in hafnium-based oxides
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机译:terminal基氧化物中的氧空位陷阱形成的三端熔断器结构
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摘要
A fuse structure includes a substrate, a gate dielectric formed on the substrate, a gate electrode formed on the gate dielectric, and first and second source/drain regions formed on the substrate on opposite sides with respect to the gate electrode, wherein the gate dielectric is configured such that a plurality of oxygen vacancies trapping respective charges are formed upon application of a pulse to the gate electrode.
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