GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS

摘要

A method for detecting W-band and terahertz radiations is disclosed. The method provides a graphene-Si Schottky diode that includes a graphene monolayer having an Ohmic contact with a source electrode supported on a top surface of a doped silicon substrate by an insulating layer, and extends over an edge of the source electrode and contacts the top surface, in a manner forming a Schottky junction. The method stores reference current-voltage (I-V) characteristics of the Schottky junction in a reverse biased mode, then measures I-V characteristics of the Schottky junction in the reverse biased mode, and detects W-band and terahertz radiation by comparing the measured I-V characteristics of the Schottky junction to the stored reference I-V characteristics.