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High Energy Barrier Perpendicular Magnetic Tunnel Junction Element With Reduced Temperature Sensitivity
High Energy Barrier Perpendicular Magnetic Tunnel Junction Element With Reduced Temperature Sensitivity
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机译:降低温度敏感性的高能垒垂直磁隧道结元件
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摘要
A magnetic tunneling junction (MTJ) with a free layer that is less temperature sensitive and is reflow compatible at 260° C. The magnetic free layer may include various configurations, such as a single as-deposited crystalline magnetic layer or a composite free layer with more than one magnetic layers or a combination of composite and single magnetic layers. The layers of the composite magnetic free layer may include as-deposited crystalline magnetic free layers or a combination of as-deposited crystalline and as-deposited amorphous magnetic layers, with or without a spacer layer. An interface layer may be provided at an interface between the free layer and adjacent layer to apply tensile stress on the free layer in the direction perpendicular to the in-plane direction to enhance perpendicular magnetic anisotropy (PMA) of the free layer.
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