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METHOD AND SYSTEM FOR COMPUTER-AIDED DESIGN OF RADIATION-HARDENED INTEGRATED CIRCUITS

机译:辐射硬化集成电路的计算机辅助设计方法和系统

摘要

A method, system, and computer program product include electronic design automation (EDA) tools used with standard CMOS processes to design and produce radiation-hardened (rad-hard) integrated circuits (ICs) having a predictable level of radiation hardness while maintaining a desired level of performance and tracking circuit area. The tools include rad-hard design rule checking (DRC) decks, rad-hard SPICE models, and rad-hard cell libraries. A rad-hard parasitic components extraction process makes use of rad-hard DRC rules to locate occurrences of parasitic devices, calculate their effects on circuit performance, and return this information to layout and circuit simulation tools. Changes to the layout are suggested and implemented with varying degrees of automation. Some of these tools can be provided as components of a rad-hard process design kit (PDK). They can be used in conjunction with commercial EDA tools to facilitate the incorporation of rad-hard features into new or existing IC designs.
机译:一种方法,系统和计算机程序产品,包括与标准CMOS工艺一起使用的电子设计自动化(EDA)工具,以设计和生产具有可预测辐射强度水平的辐射硬化(rad-hard)集成电路(IC),同时保持所需的水平性能水平和跟踪电路面积。这些工具包括rad-hard设计规则检查(DRC)平台,rad-hard SPICE模型和rad-hard单元库。抗辐射寄生元件提取过程利用抗辐射DRC规则来定位寄生器件的出现,计算其对电路性能的影响,并将此信息返回到布局和电路仿真工具。建议并通过不同程度的自动化来更改布局。这些工具中的一些可以作为抗辐射工艺设计套件(PDK)的组件提供。它们可以与商业EDA工具结合使用,以促进将抗辐射特性整合到新的或现有的IC设计中。

著录项

  • 公开/公告号US2018096096A1

    专利类型

  • 公开/公告日2018-04-05

    原文格式PDF

  • 申请/专利权人 TALLANNQUEST LLC;

    申请/专利号US201715691969

  • 发明设计人 EMILY ANN DONNELLY;

    申请日2017-08-31

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 13:00:05

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