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Monolithic Visible/IR Fused Low Light Level Imaging Sensor

机译:单片可见/红外熔融微光成像传感器

摘要

An imaging array and method for fabricating the same are disclosed. The imaging array includes a semiconductor substrate having a plurality of VIS pixel sensors and a plurality of SWIR readout circuits fabricated therein. An insulating layer is deposited on the semiconductor substrate. The insulating array has wells overlying the SWIR pixel sensors. A plurality of SWIR photodiodes are deposited in the wells. Each SWIR photodiode is located in a corresponding one of the wells and is connected by an electrically conducting path with the SWIR readout circuit underlying the SWIR photodiode. An electrically conducting transparent electrode overlying the SWIR photodiodes is connected to each of the SWIR photodiodes.
机译:公开了一种成像阵列及其制造方法。该成像阵列包括半导体基板,该半导体基板具有在其中制造的多个VIS像素传感器和多个SWIR读出电路。绝缘层沉积在半导体衬底上。绝缘阵列具有覆盖SWIR像素传感器的阱。在孔中沉积有多个SWIR光电二极管。每个SWIR光电二极管位于相应的一个阱中,并通过导电路径与SWIR光电二极管下方的SWIR读出电路相连。覆盖SWIR光电二极管的导电透明电极连接到每个SWIR光电二极管。

著录项

  • 公开/公告号US2018035061A1

    专利类型

  • 公开/公告日2018-02-01

    原文格式PDF

  • 申请/专利权人 BAE SYSTEMS IMAGING SOLUTIONS INC.;

    申请/专利号US201615222786

  • 发明设计人 BOYD FOWLER;XINQIAO LIU;

    申请日2016-07-28

  • 分类号H04N5/33;H01L31/0232;H01L27/146;H04N5/374;H04N5/378;

  • 国家 US

  • 入库时间 2022-08-21 12:59:24

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